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Thursday March 26, 2020

Samsung produces the first 10 nm DRAM memory class based on UltraVolt technology

Samsung, the world’s leading memory maker, has announced its first million DDR4 memory chips built on UltraVolt technology, which will give a significant improvement in RAM performance in a tangible and realistic way.

The company says in its blog, where it announced this success, that by producing DRAM RAM based on EUV technology, it highlights its commitment to revolutionary innovation in DRAM memory solutions and supports its IT clients around the world.

Samsung added that EUV technology will be present in the process of manufacturing future generations of future DRAM memory; starting from the category that was announced within 10 nm D1a and the highest of which is 14 nm.

The company expects to start the expanded production of DDR5 and LPDDR5 memories during the next year as it will double the production capacity and enhance its cooperation with its customers of leading IT and semiconductor suppliers to increase and improve the standard specifications in the next generation chip DDR5 / LPDDR5 and provide them in the market at the required speed.



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